r ds(on) = 0.011 ohm i d = 80a bv dss = 75v { { { ? { { { ? 2. drain 3. source 1. gate pb free plating product ME75N80C pb 75v,80a heatsink planar n-channel power mosfets general description this n-channel enhancement mode field-effect power transistor using thinki semiconductor advan ced planar stripe, dmos technol- ogy intended for off-line switch mode power supply. also, especially designed to minimize rds(on) and high rugged avalanche characteristics. the to-220m-sq pkg is well suited for adaptor power units,amplifiers,inverters and smps application. to-220m-sq 1 2 3 ME75N80C ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 1/5 rev.08c features * r ds(on) = 9.5m ? @ v gs = 10 v(typical) * ultra low gate charge ( typical 117 nc ) * fast switching capability * low reverse transfer capacitance (c rss = typical 240 pf ) * avalanche energy specified * improved dv/dt capability, high ruggedness ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss 75 v gate-source voltage v gss 20 v continuous drain current t c = 25c i d 80 a pulsed drain current (note 2) i dm 320 a single pulsed avalanche energy (note 3) e as 700 mj peak diode recovery dv/dt (note 4) dv/dt 12 v/ns to-220/to-263 300 w power dissipation to-220f p d 45 w junction temperature t j +175 c storage temperature t stg -55 ~ +175 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings onl y and functional device oper ation is not implied. 2. pulse width limited by safe operating area 3. starting t j =25c, i d =40a, v dd =37.5v 4. i sd 80a, di/dt 300a/s, v dd bv dss , t j t jmax
? thermal data parameter symbol ratings unit to-220/to-263 62.5 c /w junction to ambient to-220f ja 62.5 c /w to-220/to-263 0.5 c /w junction to case to-220f jc 3.33 c /w ? electrical characteristics (t c = 25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0 v, i d = 250 a 75 v drain-source leakage current i dss v ds = 75 v, v gs = 0 v 1 a forward v gs = 20v, v ds = 0 v 100 na gate-source leakage current reverse i gss v gs = -20v, v ds = 0 v -100 na on characteristics gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 3.0 4.0 v static drain-source on-state resistance r ds(on) v gs = 10 v, i d = 40 a 9.5 11 m ? dynamic characteristics input capacitance c iss 3700 pf output capacitance c oss 730 pf reverse transfer capacitance c rss v gs = 0 v, v ds = 25 v f = 1mhz 240 pf switching characteristics turn-on delay time t d(on) 25 ns turn-on rise time t r 100 ns turn-off delay time t d(off) 66 ns turn-off fall time t f v dd = 37.5v, i d =45a, v gs =10v, r g =4.7 ? 30 ns total gate charge q g 117 160 nc gate-source charge q gs 27 nc gate-drain charge q gd v ds = 60v, v gs = 10 v i d = 80a 47 nc ? electrical characteristics(cont.) parameter symbol test conditions min typ max unit source-drain diode ratings and characteristics drain-source diode forward voltage (note 2) v sd v gs = 0 v, i s = 80a 1.5 v continuous source current i s 80 a pulsed source current (note 1) i sm 320 a reverse recovery time t rr 132 ns reverse recovery charge q rr i s = 80a, v dd = 25 v di f / dt = 100 a/s 660 c note: 1. pulse width limited by safe operating area 2. pulsed: pulse duration=300s, duty cycle 1.5% ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 2/5 rev.08c ME75N80C
? test circuits and waveforms same type as d.u.t. l v dd drive r v gs r g - v d s d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) - + v gs = p.w. period 1a peak diode recovery dv/dt test circuit 1b peak diode recovery dv/dt waveforms ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 3/5 rev.08c ME75N80C
? test circuits and waveforms (cont.) 2a switching test circuit 2b switching waveforms 3a gate charge test circuit 3b gate charge waveform 4a unclamped inductive switching test circuit 4b unclamped inductive switching waveforms ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 4/5 rev.08c ME75N80C
? typical characteristics drain current vs. drain-source breakdown voltage 0 0 50 drain current, i d (a) drain-source breakdown voltage, bv dss (v) 60 250 20 100 150 200 300 40 80 100 350 400 450 0.5 0 0 50 drain current vs. gate threshold voltage drain current, i d (a) gate threshold voltage, v th (v) 250 100 150 200 300 1 4.0 2.0 1.5 2.5 3.0 3.5 150 0 0 drain-source on-state resistance characteristics drain current, i d (a) drain to source voltage, v ds (mv) 100 50 1 200 0.2 0 0 drain current vs. source to drain voltage drain current, i d (a) source to drain voltage, v sd (v) 0.8 0.4 0.6 2 4 6 8 10 12 1.0 2 1.8 1.6 1.4 1.2 0.8 0.6 0.4 0.2 v gs =10v i d =20a v gs =10v i d =1a ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 5/5 rev.08c ME75N80C
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